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IRF5810 especificación: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
IRF5810 similares
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IRF5810 Datasheet y Espec
Fabricante : IR
Embalaje : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 228 KB
Aplicación : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
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