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IRC530 similares

  • IRC530
    • HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
  • IRC540
    • HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

IRC530 Datasheet y Espec

Fabricante : IR 

Embalaje : TO-220 

Pins : 5 

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 248 KB

Aplicación : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. 

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