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IRC540 especificación: HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
IRC540 Datasheet y Espec
Fabricante : IR
Embalaje : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 244 KB
Aplicación : HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
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