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IRF520VS especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
IRF520VS similares
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- IRF510S
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- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
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- IRF520NS
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- IRF520VL
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- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF520VS Datasheet y Espec
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 141 KB
Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
IRF520VS PDF Download