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IRF5210 especificación: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
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- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210 Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 137 KB
Aplicación : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210 PDF Download