IRFIB6N60A especificación: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

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IRFIB6N60A Datasheet y Espec

Fabricante : IR

Embalaje : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 163 KB

Aplicación : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A