IRFIBC30G especificación: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A

IRFIBC30G similares

IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
IRFI1310G
- HEXFET power MOSFET
IRFI260
- HEXFET transistor
IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
IRFI360
- HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
IRFI460
- HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFIBC30G Datasheet y Espec

Fabricante : IR

Embalaje : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 185 KB

Aplicación : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A