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IRFSL31N20D especificación: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
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IRFSL31N20D Datasheet y Espec
Fabricante : IR
Embalaje : TO-262
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 208 KB
Aplicación : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
IRFSL31N20D PDF Download