Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4BC10S
IRG4BC10S especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4BC10S
IRG4BC10S especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 172 KB
Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A