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IRG4BC10SD-S especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC10SD-S Datasheet y Espec
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 238 KB
Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRG4BC10SD-S PDF Download