Path:OKDatasheet > Datasheet Semiconductor > Motorola Datasheet > MTB30N06VL
MTB30N06VL especificación: TMOS V power field effect transistor
MTB30N06VL similares
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB30N06VL Datasheet y Espec
Fabricante : Motorola
Embalaje : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 288 KB
Aplicación : TMOS V power field effect transistor
MTB30N06VL PDF Download