MGW12N120D similares

  • MGW12N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGW12N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
  • MGW14N60ED
    • Insulated Gate Bipolar Transistor

MGW12N120D Datasheet y Espec

Fabricante : ON Semiconductor 

Embalaje : TO-247 

Pins : 3 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 184 KB

Aplicación : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel 

MGW12N120D PDF Download