F1001 especificación: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 similares

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
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F1003
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F1004
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F1005
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F1006
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F1007
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F1001 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor