F1001C especificación: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C similares

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 36 KB

Aplicación : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor