F1170 especificación: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 similares

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 47 KB

Aplicación : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor