F1174 especificación: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 similares

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 49 KB

Aplicación : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor