F1410 especificación: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 similares

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 39 KB

Aplicación : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor