F1415 especificación: 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 similares

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 42 KB

Aplicación : 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor