F1510 especificación: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 similares

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 39 KB

Aplicación : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor