F1516 especificación: 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1516 similares

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1516 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor