F2012 especificación: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 similares

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor