F2013 especificación: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2013 similares

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2013 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 41 KB

Aplicación : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor