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IRF820FI especificación: N-channel enhancement mode power MOS transistor, 500V, 2.2A
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IRF820FI Datasheet y Espec
Fabricante : ST Microelectronics
Embalaje : ISOWATT220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 185 KB
Aplicación : N-channel enhancement mode power MOS transistor, 500V, 2.2A
IRF820FI PDF Download