Path:OKDatasheet > Datasheet Semiconductor > ST Microelectronics Datasheet > IRF822FI
IRF822FI especificación: N-channel enhancement mode power MOS transistor, 500V, 1.9A
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IRF822FI Datasheet y Espec
Fabricante : ST Microelectronics
Embalaje : ISOWATT220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 185 KB
Aplicación : N-channel enhancement mode power MOS transistor, 500V, 1.9A
IRF822FI PDF Download