Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > 1N5821
1N5821 especificación: Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 A.
1N5821 similares
- 1N5817
- Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 1.0 A.
- 1N5818
- Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 1.0 A.
- 1N5819
- Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 1.0 A.
- 1N5820
- Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 A.
- 1N5821
- Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 A.
- 1N5822
- Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A.
1N5821 Datasheet y Espec
Fabricante : Shanghai Sunrise
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 14 KB
Aplicación : Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 A.
1N5821 PDF Download