Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > 1N5822
1N5822 especificación: Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A.
Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > 1N5822
1N5822 especificación: Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A.
Fabricante : Shanghai Sunrise
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 14 KB
Aplicación : Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A.