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R16MBV IRF9Z24L IRGPH40M SD150N16MBV 301U160 IRFB9N65A ST303C04CHK2L 45L5 ST173S12MFK2 SD233N45S50MSC IRFPC50LC ST333S04MFM0L SD103R25S20MC 307UR160P4 IRGPC40UD2 ST1200C16K0L SD200R24PBC CPV362MF ST333C04LHK1L IRF5305S 303URA120P4 ST2600C20R1 IRG4BC20MD SD703C12S20L ST230S12P2V S

IR Catálogo de datos-68

Parte NoFabricanteAplicación
SD453N20S30MSC IRFast recovery diode
SD150R16MBV IRStandard recovery diode
IRF9Z24L IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
IRGPH40M IRInsulated gate bipolar transistor
SD150N16MBV IRStandard recovery diode
301U160 IRStandard recovery diode
IRFB9N65A IRHEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A
ST303C04CHK2L IRInverter grade thyristor
45L5 IRStandard recovery diode
ST173S12MFK2 IRInverter grade thyristor
SD233N45S50MSC IRFast recovery diode
IRFPC50LC IRHEXFET power mosfet
ST333S04MFM0L IRInverter grade thyristor
SD103R25S20MC IRFast recovery diode
307UR160P4 IRStandard recovery diode
IRGPC40UD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
ST1200C16K0L IRPhase control thyristor
SD200R24PBC IRStandard recovery diode
CPV362MF IRIGBT SIP module
ST333C04LHK1L IRInverter grade thyristor
IRF5305S IRPower MOSFET, 55V, 31A
303URA120P4 IRStandard recovery diode
ST2600C20R1 IRPhase control thyristor
IRG4BC20MD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
SD703C12S20L IRFast recovery diode
ST230S12P2V IRPhase control thyristor
SD103N10S10MC IRFast recovery diode
180RKI80S90 IRPhase control thyristor
ST1900C52R1 IRPhase control thyristor
ST380C04C2 IRPhase control thyristor

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