Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-70
MTC IRGPH30MD2 IRFSL31N20D SD203N25S20PSC 70U80 ST1200C18K2L IRFR120N ST1200C12K2L ST330S16P0 SD200N04PC IRF3706S 303UR160P4 200HF80PBV ST180C18C3 ST230S16M2L IRFP250N ST303S04MFN3L SD153N16S15MV SD253N08S20PBV SD233N30S50PC SD233R36S50PTC 305U80P2 301URA200 IRL620 302UR5A ST180S
Parte No | Fabricante | Aplicación |
---|---|---|
IRF7103Q | IR | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A |
SD453R12S20MTC | IR | Fast recovery diode |
IRGPH30MD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
IRFSL31N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A |
SD203N25S20PSC | IR | Fast recovery diode |
70U80 | IR | Standard recovery diode |
ST1200C18K2L | IR | Phase control thyristor |
IRFR120N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A |
ST1200C12K2L | IR | Phase control thyristor |
ST330S16P0 | IR | Phase control thyristor |
SD200N04PC | IR | Standard recovery diode |
IRF3706S | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77A |
303UR160P4 | IR | Standard recovery diode |
200HF80PBV | IR | Standard recovery diode |
ST180C18C3 | IR | Phase control thyristor |
ST230S16M2L | IR | Phase control thyristor |
IRFP250N | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A |
ST303S04MFN3L | IR | Inverter grade thyristor |
SD153N16S15MV | IR | Fast recovery diode |
SD253N08S20PBV | IR | Fast recovery diode |
SD233N30S50PC | IR | Fast recovery diode |
SD233R36S50PTC | IR | Fast recovery diode |
305U80P2 | IR | Standard recovery diode |
301URA200 | IR | Standard recovery diode |
IRL620 | IR | HEXFET power mosfet |
302UR5A | IR | Standard recovery diode |
ST180S04P1L | IR | Phase control thyristor |
303URA80P4 | IR | Standard recovery diode |
IRF460 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A |
SD300R20MC | IR | Standard recovery diode |