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P3 SD203N04S10PC IRF5Y3205CM SD203R25S15MC ST1900C48R1 IR2127 302UR80A SD600R08MTC IRF634 ST780C04L3L IRG4PC30U ST730C18L0L SD103N16S10PV SD203N10S10MC ST303C12LHK0 IRL630S 305UR250P4 70UR120AYPD ST180S16M2 SD203R14S20PC CPV362MU 300UR30A IRF7700 ST203S10MFJ1 300UF160AYPD SD500OC

IR Catálogo de datos-71

Parte NoFabricanteAplicación
IRLR120NTR IRN-channel power MOSFET, 100V, 10A
305URA250P3 IRStandard recovery diode
SD203N04S10PC IRFast recovery diode
IRF5Y3205CM IRHEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.022 Ohm, ID = 18A
SD203R25S15MC IRFast recovery diode
ST1900C48R1 IRPhase control thyristor
IR2127 IRCurrent limiting single channel driver
302UR80A IRStandard recovery diode
SD600R08MTC IRStandard recovery diode
IRF634 IRPower MOSFET
ST780C04L3L IRPhase control thyristor
IRG4PC30U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
ST730C18L0L IRPhase control thyristor
SD103N16S10PV IRFast recovery diode
SD203N10S10MC IRFast recovery diode
ST303C12LHK0 IRInverter grade thyristor
IRL630S IRHEXFET power mosfet
305UR250P4 IRStandard recovery diode
70UR120AYPD IRStandard recovery diode
ST180S16M2 IRPhase control thyristor
SD203R14S20PC IRFast recovery diode
CPV362MU IRIGBT SIP module
300UR30A IRStandard recovery diode
IRF7700 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V.
ST203S10MFJ1 IRInverter grade thyristor
300UF160AYPD IRStandard recovery diode
SD500OC30R IRStandard recovery diode
IRFL9110 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A
SD153N08S10MBV IRFast recovery diode
SD150R20MBC IRStandard recovery diode

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