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P3 SD203N04S10PC IRF5Y3205CM SD203R25S15MC ST1900C48R1 IR2127 302UR80A SD600R08MTC IRF634 ST780C04L3L IRG4PC30U ST730C18L0L SD103N16S10PV SD203N10S10MC ST303C12LHK0 IRL630S 305UR250P4 70UR120AYPD ST180S16M2 SD203R14S20PC CPV362MU 300UR30A IRF7700 ST203S10MFJ1 300UF160AYPD SD500OC
Parte No | Fabricante | Aplicación |
---|---|---|
IRLR120NTR | IR | N-channel power MOSFET, 100V, 10A |
305URA250P3 | IR | Standard recovery diode |
SD203N04S10PC | IR | Fast recovery diode |
IRF5Y3205CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.022 Ohm, ID = 18A |
SD203R25S15MC | IR | Fast recovery diode |
ST1900C48R1 | IR | Phase control thyristor |
IR2127 | IR | Current limiting single channel driver |
302UR80A | IR | Standard recovery diode |
SD600R08MTC | IR | Standard recovery diode |
IRF634 | IR | Power MOSFET |
ST780C04L3L | IR | Phase control thyristor |
IRG4PC30U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A |
ST730C18L0L | IR | Phase control thyristor |
SD103N16S10PV | IR | Fast recovery diode |
SD203N10S10MC | IR | Fast recovery diode |
ST303C12LHK0 | IR | Inverter grade thyristor |
IRL630S | IR | HEXFET power mosfet |
305UR250P4 | IR | Standard recovery diode |
70UR120AYPD | IR | Standard recovery diode |
ST180S16M2 | IR | Phase control thyristor |
SD203R14S20PC | IR | Fast recovery diode |
CPV362MU | IR | IGBT SIP module |
300UR30A | IR | Standard recovery diode |
IRF7700 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V. |
ST203S10MFJ1 | IR | Inverter grade thyristor |
300UF160AYPD | IR | Standard recovery diode |
SD500OC30R | IR | Standard recovery diode |
IRFL9110 | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A |
SD153N08S10MBV | IR | Fast recovery diode |
SD150R20MBC | IR | Standard recovery diode |