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IRF530N especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N similares
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IRF530N Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 233 KB
Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N PDF Download