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IRF5801 especificación: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
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IRF5801 Datasheet y Espec
Fabricante : IR
Embalaje : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 131 KB
Aplicación : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
IRF5801 PDF Download