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IRF5803 especificación: HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
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IRF5803 Datasheet y Espec
Fabricante : IR
Embalaje : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 119 KB
Aplicación : HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
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