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IRF5806 especificación: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V
IRF5806 similares
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IRF5806 Datasheet y Espec
Fabricante : IR
Embalaje : Micro6
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 239 KB
Aplicación : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V
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