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IRF5851 especificación: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)
IRF5851 similares
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- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
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- IRF520NS
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- IRF520VL
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- IRF520VS
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- IRF5210
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IRF5851 Datasheet y Espec
Fabricante : IR
Embalaje : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 189 KB
Aplicación : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)
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