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IRF5M5210 especificación: HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A
IRF5M5210 similares
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IRF5M5210 Datasheet y Espec
Fabricante : IR
Embalaje : TO-254AA
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 124 KB
Aplicación : HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A
IRF5M5210 PDF Download