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IRF5Y1310CM especificación: HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
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IRF5Y1310CM Datasheet y Espec
Fabricante : IR
Embalaje : TO-257AA
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 117 KB
Aplicación : HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM PDF Download