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IRF5Y5305CM especificación: HEXFET power MOSFET thru-hole. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -18A
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IRF5Y5305CM Datasheet y Espec
Fabricante : IR
Embalaje : TO-257AA
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 118 KB
Aplicación : HEXFET power MOSFET thru-hole. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -18A
IRF5Y5305CM PDF Download