Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4BC20FD-S
IRG4BC20FD-S especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4BC20FD-S
IRG4BC20FD-S especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 244 KB
Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A