IRG4BC20S especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A

IRG4BC20S similares

IRG4BC10K
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IRG4BC10KD
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IRG4BC10S
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IRG4BC10SD
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRG4BC10SD-L
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IRG4BC10SD-S
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IRG4BC10UD
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IRG4BC20S Datasheet y Espec

Fabricante : IR

Embalaje :

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 172 KB

Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A