okDatasheet.com

IRG4BC30FD similares

  • IRG4BC10K
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10KD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10S
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-S
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10UD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.

IRG4BC30FD Datasheet y Espec

Fabricante : IR 

Embalaje :  

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 453 KB

Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A 

IRG4BC30FD PDF Download