IRG4BC30W-S especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A

IRG4BC30W-S similares

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IRG4BC30W-S Datasheet y Espec

Fabricante : IR

Embalaje : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 206 KB

Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A