Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PC30W
IRG4PC30W especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PC30W
IRG4PC30W especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
Fabricante : IR
Embalaje : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 135 KB
Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A