Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PH30KD
IRG4PH30KD especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PH30KD
IRG4PH30KD especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Fabricante : IR
Embalaje : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 233 KB
Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A