Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PSH71KD
IRG4PSH71KD especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PSH71KD
IRG4PSH71KD especificación: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A
Fabricante : IR
Embalaje : SUPER-247
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 219 KB
Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A