IRG4RC10K especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A

IRG4RC10K similares

IRG4BC10K
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4RC10K Datasheet y Espec

Fabricante : IR

Embalaje : D-PAK

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 147 KB

Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A