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IRG4RC10KD similares

  • IRG4BC10K
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10KD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
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    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4RC10KD Datasheet y Espec

Fabricante : IR 

Embalaje : TO-252AA 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 208 KB

Aplicación : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A 

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