IRG4RC20F especificación: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A

IRG4RC20F similares

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IRG4RC20F Datasheet y Espec

Fabricante : IR

Embalaje : TO-252AA

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 290 KB

Aplicación : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A