Path:OKDatasheet > Datasheet Semiconductor > ST Microelectronics Datasheet > STH60N10
STH60N10 especificación: Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C