Path:OKDatasheet > Datasheet Semiconductor > ST Microelectronics Datasheet > STH6N100
STH6N100 especificación: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100 similares
- STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
- STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH6N100 Datasheet y Espec
Fabricante : ST Microelectronics
Embalaje :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 222 KB
Aplicación : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100 PDF Download