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- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
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STH60N10FI Datasheet y Espec

Embalaje :

Pins : 0

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 270 KB

Aplicación : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS